S2DS: Physics-Based Compact Model for Circuit Simulation of Two-Dimensional Semiconductor Devices Including Non-Idealities

摘要

We present a physics-based compact model for two-dimensional (2D)field-effect transistors (FETs) based on monolayer semiconductors such as MoS2.A semi-classical transport approach is appropriate for the 2D channel, enablingsimplified analytical expressions for the drain current. In addition tointrinsic FET behavior, the model includes contact resistance, traps andimpurities, quantum capacitance, fringing fields, high-field velocitysaturation and self-heating, the latter being found to play a strong role. Themodel is calibrated with state-of-the-art experimental data for n- and p-type2D-FETs, and it can be used to analyze device properties for sub-100 nm gatelengths. Using the experimental fit, we demonstrate feasibility of circuitsimulations using properly scaled devices. The complete model is implemented inSPICE-compatible Verilog-A, and a downloadable version is freely available onthe nanoHUB.org.